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| ES1F - ES1J Fast Rectifiers July 2007 ES1F - ES1J Fast Rectifiers Features * For surface mount applications. * Glass passivated junction. * Low profile package. * Easy pick and place. * Built-in strain relief. * Superfast recovery times for high efficiency. SMA(DO-214AC) Color Band Denotes Cathode Absolute Maximum Ratings * Symbol VRRM IF(AV) IFSM TJ TSTG PD Ta = 25C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave (JEDEC method) Junction Temperature Storage Temperature Range Power Dissipation Value ES1F 300 ES1G 400 1.0 30 150 ES1H 500 ES1J 600 Units V A A C C W -55 to 150 1.47 * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol RJA RJL Parameter Thermal Resistance, Junction to Ambient * Thermal Resistance, Junction to Lead * Value 85 35 Units C/W C/W * P. C. B mounted on 0.2'' x 0.2''( 5 x 5 mm) copper Pad Area. Electrical Characteristics Symbol VF Trr IR Cj TC = 25C unless otherwise noted Parameter Maximum Forward Voltage @ IF = 1.0 A Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Maximum Reverse Current @ rated VR Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz TA = 25C TA = 100C 10.0 1.3 Value 1.7 35 5.0 100 8.0 Units V ns uA pF (c)2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com ES1F - ES1J Rev. A ES1F - ES1J Fast Rectifiers Typical Performance Characteristics FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT. (A) 1.2 30 FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C AVERAGE FORWARD CURRENT. (A) 1.0 RESISTIVE OR INDUCTIVE LOAD 0.2X0.2"(5.0X5.0mm) COPPER PAD AREAS 25 0.8 20 0.6 15 0.4 10 0.2 0 80 90 100 110 120 o 5.0 130 140 150 1 10 NUMBER OF CYCLES AT 60Hz 100 LEAD TEMPERATURE. ( C) FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE Tj=25 C PULSE WIDTH 300uS 1% DUTY CYCLE 0 FIG.4- TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS FORWARD CURRENT. (A) INSTANTANEOUS REVERSE CURRENT. ( A) 10 10 o 100 Tj=125 0C 1A -D ES 1F -1 G ES 1 ES1F-1G 10 Tj=85 0C 1 -1 J ES1H-1J 0.1 0.1 ES 1H 1 Tj=25 0C 0.1 0.01 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 FORWARD VOLTAGE. (V) PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL JUNCTION CAPACITANCE 14 12 10 8.0 6.0 4.0 2.0 0 0 1 ES1 FG JUNCTION CAPACITANCE.(pF) Tj=25 0C f=1.0MHz Vsig=50mVp-p ES 1H -J 10 100 REVERSE VOLTAGE. (V) 2 ES1F - ES1J Rev. A www.fairchildsemi.com ES1F - ES1J Fast Rectifiers Package Dimensions SMA / DO - 214AC Dimensions in Millimeters 3 ES1F - ES1J Rev. A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production |
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